RF CMOS receiver front-end using a reflex amplifier

Authors

Radovan Kuzet, University of Texas-Pan American

Date of Award

12-2004

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical Engineering

First Advisor

Dr. Heinrich D. Foltz

Second Advisor

Dr. Junfei Li

Third Advisor

Dr. Robert E. Jones

Abstract

A concept for an RF-CMOS receiver with reflex topology is developed and tested, using OrCad as the primary design and simulation tool. The main idea of the reflex topology is to reuse a Low Noise Amplifier (LNA) stage in the circuit and thus eliminate one high power consumption stage. A Gilbert cell is used for down conversion, with the benefit of low noise and low power while maintaining gain. A set of passive diplexers allows reuse of the LNA at the RF and IF. The complete circuit was simulated using 0.18 micron and 0.5 micron AMI technology. Parameters for the transistors are imported from MOSIS development tools and design specifications for the purpose of production of this device. The overall system was simulated using the 900 MHz frequency for radio frequency (RF) and shows substantial gain and low noise figure. Lastly, the Gilbert cell mixer has been modified in an attempt to further reduce power consumption. Instead of using a local oscillator, we designed the Gilbert cell so it would self-oscillate. Output results and linearity characteristics are shown through simulation.

Comments

Copyright 2004 Radovan Kuzet. All Rights Reserved.

https://go.openathens.net/redirector/utrgv.edu?url=https://www.proquest.com/dissertations-theses/rf-cmos-receiver-front-end-using-reflex-amplifier/docview/305040106/se-2?accountid=7119

Granting Institution

University of Texas-Pan American