Theses and Dissertations - UTB/UTPA
Characterization of GaN thin films grown by RF Magnetron Sputtering for fabrication of an AlGaN/GaN HEMT biosensor
Date of Award
Master of Science (MS)
Dr. Hasina Huq
Dr. Heinrich Foltz
Dr. Karen Lozano
Radio-Frequency (RF) Magnetron Sputtering has been used to grow GaN thin films for future fabrication of an AlGaN/GaN HEMT biosensor. A GaN target was sputtered at various parameters on silicon and sapphire substrates, at room temperature and at elevated temperature using substrate heating and post deposition annealing treatment. The research conducted investigates the effects of sputtering gas (Argon or Nitrogen gas), RF power (40W or 50W), and pressure (4mT – 30mT) on the structural properties of the thin films. Imaging tools such as the Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDS), X-ray Diffractometer (XRD), and X-ray photoelectron spectroscopy (XPS) are used for characterization of each thin film. Results revealed that polycrystalline GaN thin film with a hexagonal GaN wurtzite structure can be grown on silicon and sapphire wafers. In addition, oxygen impurities incorporated during the deposition are shown to be reduced by using temperature depositions.
University of Texas-Pan American
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