Document Type
Article
Publication Date
9-23-2016
Abstract
The aim of this research work is to analyze the surface characteristics of an improved AlGaN/GaN HEMT biosensor. The investigation leads to analyze the transistor performance to detect human MIG with the help of an analytical model and measured data. The surface engineering includes the effects of repeatability, influence of the substrate, threshold shifting, and floating gate configuration. A numerical method is developed using the charge-control model and the results are used to observe the changes in the device channel at the quantum level. A Self-Assembled Monolayer (SAM) is formed at the gate electrode to allow immobilization and reliable crosslinking between the surface of the gate electrode and the antibody. The amperometric detection is realized solely by varying surface charges induced by the biomolecule through capacitive coupling. The equivalent DC bias is 6.99436 × 10−20 V which is represented by the total number of charges in the MIG sample. The steady state current of the clean device is 66.89 mA. The effect of creation and immobilization of the protein on the SAM layer increases the current by 80 - 150 μA which ensures that successful induction of electrons is exhibited.
Recommended Citation
Huq, H.F., Trevino II, H. and Castillo, J. (2016) Characteristics of AlGaN/GaN HEMTs for Detection of MIG. Journal of Modern Physics, 7, 1712- 1724. http://dx.doi.org/10.4236/jmp.2016.713154
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.
Publication Title
Journal of Modern Physics
DOI
10.4236/jmp.2016.713154
Comments
Copyright © 2016 by authors and Scientific Research Publishing Inc. This work is licensed under the Creative Commons Attribution International License (CC BY 4.0).