Document Type
Conference Proceeding
Publication Date
3-2017
Abstract
Aluminum gallium nitride (AlGaN) and the native oxide of GaN (Gallium Oxide (Ga2O3)) have become potential candidates for GaN-based high-power metal-oxide-semiconductor devices. This paper analyzes the development of AlGaN/GaN and Ga2O3/GaN heteroepitaxy. Two steps are followed for the formation of the epitaxial layers on silicon (Si) and sapphire (Al2O3) substrates: (1) magnetron sputtering deposition for AlGaN and (2) dry thermal oxidation for Ga2O3. The AlGaN layer is sputtered for five and ten hours in a low-pressure environment at room temperature using a combination of argon and nitrogen gases during deposition. The Ga2O3 is produced by dry thermal annealing of the GaN-based samples. The samples are subjected to a twohour thermal treatment from 800 °C to 1000 °C. Characterization of the samples is conducted by X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDAX), and atomic force microscopy (AFM). XPS analysis shows the presence of AlGaN and Ga2O3 compounds in the Ga-3d electron scan. EDAX analysis confirms the results obtained through XPS. The film thickness is characterized by AFM studies. The thickness of the layers is 43 nm for AlGaN and 22 nm for Ga2O3.
Recommended Citation
Roman Garcia Perez, Jorge Castillo, Hasina Huq. 2017. Characterization of AlGaN and Ga2O3 Epitaxies on Silicon and Sapphire Substrates. In 59th Annual Technical Conference Proceedings, 479-485. https://doi.org/10.14332/svc16.proc.0045
First Page
479
Last Page
485
Publication Title
59th Annual Technical Conference Proceedings
DOI
10.14332/svc16.proc.0045
Comments
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