Algan/Gan Hemt By Magnetron Sputtering System

Author

Roman Garcia Perez, The University of Texas Rio Grande Valley

Date of Award

8-2017

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical Engineering

First Advisor

Dr. Hasina Huq

Second Advisor

Dr. Karen Lozano

Third Advisor

Dr. Mounir Ben Ghalia

Abstract

In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

Comments

Copyright 2017 Roman Garcia Perez. All Rights Reserved.

https://www.proquest.com/dissertations-theses/algan-gan-hemt-magnetron-sputtering-system/docview/1965453309/se-2?accountid=7119

Recommended Citation

Garcia Perez, Roman, "Algan/Gan Hemt By Magnetron Sputtering System" (2017). Theses and Dissertations. 260.
https://scholarworks.utrgv.edu/etd/260