Mechanical Engineering Faculty Publications and Presentations

Growth of black arsenic phosphorus thin films and its application for field-effect transistors

Document Type

Article

Publication Date

5-2021

Abstract

Black arsenic phosphorus single crystals are grown using a short-way transport technique that results in crystals up to 12 x 110 microns and range from 200 nm to 2 microns thick. The reaction conditions require tin, tin(IV) iodide, grey arsenic, and red phosphorus placed in an evacuated quartz ampule and ramped up to a maximum temperature of 630 °C. The crystal structure and elemental composition were characterized using Raman spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, cross-sectional transmission microscopy and electron backscatter diffraction. The data provides valuable insight into the growth mechanism. A previously developed b-P thin film growth technique can be adapted to b-AsP film growth with slight changes to the procedure. Devices fabricated from exfoliated bulk-b-AsP grown in the same conditions as the thin film growth process are characterized, showing an on-off current ratio of 102 , a threshold voltage of -60 V, and a peak field-effect hole mobility of 23 cm2 /V·s at Vd=-0.9 and Vg=-60 V.

Comments

Student publication.

© 2021IOP Publishing Ltd

Publication Title

Nanotechnology

DOI

10.1088/1361-6528/abfc09

Link to Full Text

Share

COinS