Boron Nitride Thin-Film Deposited by RF Magnetron Sputtering

Author

Jesus A. Valladares Gonzalez, The University of Texas Rio Grande Valley

Date of Award

12-2018

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical Engineering

First Advisor

Dr. Hasina Huq

Second Advisor

Dr. Yoonsu Choi

Third Advisor

Dr. Yong Zhou

Abstract

Cubic Boron Nitride is considered a superhard material, its thermochemical stability makes it suitable for applications with corrosive environments and high temperatures. C-BN is grown by PDV on Si substrates. The plasma is energized via an RF source to sputter the target. The ion species in the plasma can be described by the classic electrodynamic expression . Plasma temperature is given by T = (6.2836*E/8*k). The sputter is given by the ratio of the heat transfer to the enthalpy of formation , of the target. The Hall Measurement is performed as recommended by NIST. The measurement was performed on a c-BN thin film deposited on a Si substrate. The deposition was done at 6mT, 600 °C, 6Ar/9N2, for 18 Hr. The voltage polarity measurement indicates that holes are the majority charge carrier and verifies the p-type conductivity of the sample, this is an important parameter in semiconductor devices.

Comments

Copyright 2018 Jesus A. Valladares Gonzalez. All Rights Reserved.

https://go.openathens.net/redirector/utrgv.edu?url=https://www.proquest.com/dissertations-theses/boron-nitride-thin-film-deposited-rf-magnetron/docview/2177394015/se-2?accountid=7119

Recommended Citation

Valladares Gonzalez, Jesus A., "Boron Nitride Thin-Film Deposited by RF Magnetron Sputtering" (2018). Theses and Dissertations. 546.
https://scholarworks.utrgv.edu/etd/546